Nexperia PSMN2R1-30YLEX MOSFET N沟道 25 V，2.4 毫欧 逻辑电平 MOSFET，采用 NextPower 技术，封装为 LFPAK

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 28 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 124 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 160 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.2 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V