Nexperia PSMN2R8-80SSFJ 增强型SOA的N沟道100V、2.9毫欧MOSFET，封装为LFPAK88

Fall Time: 27 ns

Rise Time: 21 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 95 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 341 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 28 ns

Typical Turn-Off Delay Time: 58 ns

Id - Continuous Drain Current: 205 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.8 mOhms

Vds - Drain-Source Breakdown Voltage: 80 V

Vgs th - Gate-Source Threshold Voltage: 4 V