Nexperia PSMN3R0-60BS,118 MOSFET N沟道 40 V，3.3 mOhm，120 A 逻辑电平 MOSFET，采用 LFPAK56 封装，使用 optimizedNextPowerS3 Schottky-Plus 技术

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 130 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 306 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 100 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 3.2 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V