Nexperia PSMN6R0-30YLB,115 MOSFETs N沟道 30 V，6.0 mohm 逻辑电平 MOSFET，采用 NextPowerS3 技术，封装为 LFPAK56

Technology: Si

Unit Weight: 91.420 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 19 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 58 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 71 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 6.9 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.95 V