Nexperia PSMNR56-25YLEX MOSFET N沟道 30 V，0.67 毫欧，380 A 逻辑电平 MOSFET，采用 NextPowerS3 技术，封装为 LFPAK56E

Fall Time: 64 ns

Rise Time: 150 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 89 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 333 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 65 ns

Typical Turn-Off Delay Time: 51 ns

Id - Continuous Drain Current: 320 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 630 uOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V