Nexperia PXP012-30QLJ MOSFET 30 V，P沟槽型P沟道MOSFET

Fall Time: 55 ns

Rise Time: 27 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 43.4 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 32 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 4 ns

Typical Turn-Off Delay Time: 68 ns

Id - Continuous Drain Current: 15.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 12.8 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2 V