NXP AFT09MS007NT1 射频功率MOSFET陆地移动7W PLD1.5W

Gain: 15.2 dB

Technology: Si

Unit Weight: 280 mg

Output Power: 7.3 W

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Operating Frequency: 136 MHz to 941 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 114 W

Vgs - Gate-Source Voltage: + 12 V

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 9.8 S

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V