NXP BFU630F,115 射频双极小信号单个NPN 21GHz

Technology: Si

Unit Weight: 6.661 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Wideband

Operating Frequency: 21 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

Gain Bandwidth Product fT: 21 GHz

Emitter- Base Voltage VEBO: 2.5 V

Continuous Collector Current: 3 mA

Maximum DC Collector Current: 30 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 90

Collector- Emitter Voltage VCEO Max: 5.5 V