NXP MRFE6S9060NR1 射频功率MOSFET HV6E 60W TO270-2N FET

Gain: 21.1 dB

Width: 6.15 mm

Height: 2.08 mm

Length: 9.7 mm

Technology: Si

Unit Weight: 529.550 mg

Channel Mode: Enhancement

Output Power: 14 W

REACH - SVHC: Details

Configuration: Single

Mounting Style: Screw Mount

Moisture Sensitive: Yes

Operating Frequency: 1 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 12 V

Id - Continuous Drain Current: 1.5 A

Maximum Operating Temperature: + 150 C

Vds - Drain-Source Breakdown Voltage: 66 V

Vgs th - Gate-Source Threshold Voltage: 2.2 V