NXP MW6S010NR1 射频功率MOSFET HV6 900MHZ 10W TO270-2N

Gain: 18 dB

Technology: Si

Unit Weight: 1.700 g

Channel Mode: Enhancement

Output Power: 10 W

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Operating Frequency: 450 MHz to 1.5 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 12 V

Id - Continuous Drain Current: 125 mA

Maximum Operating Temperature: + 150 C

Vds - Drain-Source Breakdown Voltage: 68 V

Vgs th - Gate-Source Threshold Voltage: 3 V