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Technology: Si
Unit Weight: 6.668 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar Wideband
Operating Frequency: 18 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 490 mW
Gain Bandwidth Product fT: 18 GHz
Emitter- Base Voltage VEBO: 2.5 V
Continuous Collector Current: 70 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 90
Collector- Emitter Voltage VCEO Max: 5.5 V
