NXP BFU710F,115 射频硅锗NPN宽带硅锗射频晶体管

Technology: SiGe

Unit Weight: 6.665 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Wideband

Operating Frequency: 43 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 136 mW

Emitter- Base Voltage VEBO: 1 V

Continuous Collector Current: 2 mA

Maximum DC Collector Current: 10 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 2.8 V