NXP BFU725F/N1,115 射频双极小信号2.8V 0.04A 4针晶体管GP BJT NPN

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: SiGe

Unit Weight: 6.670 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Wideband

Operating Frequency: 55 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 136 mW

DC Current Gain hFE Max: 160 at 10 mA at 2 V

Gain Bandwidth Product fT: 55000 MHz

Emitter- Base Voltage VEBO: 1 V

Collector- Base Voltage VCBO: 10 V

Continuous Collector Current: 25 mA

Maximum DC Collector Current: 40 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 2.8 V