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Width: 1.35 mm
Height: 0.75 mm
Length: 2.2 mm
Technology: SiGe
Unit Weight: 6.665 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar Wideband
Operating Frequency: 55 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 197 mW
DC Current Gain hFE Max: 555
Emitter- Base Voltage VEBO: 1 V
Collector- Base Voltage VCBO: 10 V
Continuous Collector Current: 5 mA
Maximum DC Collector Current: 30 mA
Maximum Operating Temperature: + 150 C
DC Collector/Base Gain hfe Min: 205
Collector- Emitter Voltage VCEO Max: 2.8 V
