NXP MMRF1014NT1 射频功率MOSFET横向N沟道射频功率LDMOS晶体管，1-2000 MHz，4 W，28 V

Gain: 19 dB

Technology: Si

Unit Weight: 280 mg

Output Power: 4 W

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Operating Frequency: 1 MHz to 2 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 12 V

Id - Continuous Drain Current: 50 mA

Maximum Operating Temperature: + 150 C

Vds - Drain-Source Breakdown Voltage: 68 V

Vgs th - Gate-Source Threshold Voltage: 2 V