NXP MMRF1304GNR1 射频功率MOSFET 1.8 - 2000 MHz 25 W 50 V

Gain: 27 dB

Technology: Si

Unit Weight: 548 mg

Output Power: 25 W

REACH - SVHC: Details

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Operating Frequency: 1.8 MHz to 2 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 133 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V