NXP MMRF1305HSR5 射频功率MOSFET 1.8-2000 MHz 100 W 50 V

Gain: 27 dB

Technology: Si

Unit Weight: 4.570 g

Output Power: 100 W

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.8 MHz to 2 GHz

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 133 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V