NXP MMRF1312GSR5 射频功率MOSFET 射频功率LDMOS晶体管 900-1215 MHz，1000 W峰值，52 V

Gain: 19.2 dB

Technology: Si

Unit Weight: 8.518 g

Output Power: 1.2 kW

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 900 MHz to 1.215 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.053 kW

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 2.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 112 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V