NXP MRF6V10010NR4 射频功率MOSFET VHV6 10W 脉冲 PLD1.5

Gain: 25 dB

Width: 5.97 mm

Height: 1.83 mm

Length: 6.73 mm

Technology: Si

Unit Weight: 280 mg

Channel Mode: Enhancement

Output Power: 10 W

REACH - SVHC: Details

Configuration: Single Dual Source

Mounting Style: Screw Mount

Moisture Sensitive: Yes

Operating Frequency: 960 MHz to 1.4 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V