NXP MRFE6VS25LR5 射频功率MOSFET VHV6E 25W50V NI360L

Gain: 27 dB

Technology: Si

Unit Weight: 3 g

Channel Mode: Enhancement

Output Power: 25 W

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Operating Frequency: 1.8 MHz to 2 GHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 210 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 133 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V