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Gain: 25.1 dB
Technology: Si
Unit Weight: 13.159 g
Output Power: 1.8 kW
Mounting Style: Screw Mount
Transistor Type: LDMOS FET
Number of Channels: 2 Channel
Operating Frequency: 1.8 MHz to 400 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 2.247 kW
Vgs - Gate-Source Voltage: + 10 V
Id - Continuous Drain Current: 43 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Forward Transconductance - Min: 44.7 S
Vds - Drain-Source Breakdown Voltage: 179 V
Vgs th - Gate-Source Threshold Voltage: 2.9 V
