NXP PDTA115EE,115 Pre-Biased Bipolar Transistor

R1/R2: 1

Mounting Type: Surface Mount

Power-Maximum: 150mW

Transistor type: PNP-Prebias

Collector current: 20mA

DC electricity gain: 80@5mA@5V

Resistance-Base (R1): 100kOhms

Vce Saturation (maximum): 150mV@250uA,5mA

Collector-emitter voltage: 50V

Resistance-Emitter base (R2): 100kOhms

DC current gain (hFE) (minimum): 80@5mA,5V

Current-Collector (Ic) (maximum): 20mA

Current-Collector cutoff (maximum): 1uA

Voltage-Collector-emitter breakdown (maximum): 50V

Datasheet