onsemi 1SS383T1G Schottky Barrier Diode

Speed: Fast Recovery =< 500ns > 200mA(Io)

Diode type: Schottky

Mounting Type: Surface Mount

Diode Configuration: 2Independence

Average rectified current: 0.3A

Operating temperature range: -55 to 150C

Spannung – DC Reverse Vr Max: 40V

Spannung – Vorwärts (Vf) Max: 600mV@100mA

Current - Average Rectified Io per Diode: 300mA(DC)

Current - Reverse Leakage with Vr Applied: 5uA@40V

Datasheet