onsemi 2SC3646S-TD-E 双极型晶体管 BIP NPN 1A 100V

Technology: Si

Unit Weight: 51.380 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 280

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 140

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 100 mV