onsemi 2SC3648S-TD-E 双极型晶体管 BIP NPN 0.7A 160V

Technology: Si

Unit Weight: 143.050 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: 700 mA

Maximum DC Collector Current: 700 mA

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 160 V

Collector-Emitter Saturation Voltage: 120 mV