onsemi 2SC5415AF-TD-E 射频双极晶体管 射频晶体管，NPN 单极，12 V，100 mA，fT = 6.7 GHz

Technology: Si

Unit Weight: 130.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 6.7 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 90 at 30 mA, 5 V

Collector- Emitter Voltage VCEO Max: 12 V