onsemi 2SD1628G-TD-E 双极晶体管 - 双极晶体管，20V，5A，低VCE（饱和），NPN单管PCP hFE 280-560

Technology: Si

Unit Weight: 51.670 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 560 at 500 mA, 2 V

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 500 mV