onsemi 2SD1805F-TL-E 双极型晶体管 BIP NPN 5A 20V

Technology: Si

Unit Weight: 281.380 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 560

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 220 mV