onsemi 2SD1816S-TL-H 双极晶体管 BIP NPN 4A 100V

Technology: Si

Unit Weight: 1.800 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 150 mV