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Width: 1.5 mm
Height: 1.1 mm
Length: 2.9 mm
Technology: Si
Unit Weight: 11.780 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar Power
Operating Frequency: 5.5 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 180
Gain Bandwidth Product fT: 4.5 GHz
Emitter- Base Voltage VEBO: 3 V
Operating Temperature Range: + 25 C to + 150 C
Collector- Base Voltage VCBO: 20 V
Continuous Collector Current: 5 mA
Maximum DC Collector Current: 70 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: + 25 C
DC Collector/Base Gain hfe Min: 100
Collector- Emitter Voltage VCEO Max: 10 V
