onsemi 55GN01MA-TL-E 射频双极晶体管 BIP NPN 70MA 10V FT=5.5G

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 4.5 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 400 mW

Emitter- Base Voltage VEBO: 3 V

Continuous Collector Current: 70 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 100 at 10 mA, 5 V

Collector- Emitter Voltage VCEO Max: 10 V