onsemi BD681G 达林顿晶体管 4A 100V 双极功率NPN

Width: 2.66 mm

Height: 11.04 mm

Length: 7.74 mm

Unit Weight: 680 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 750

Maximum Collector Cut-off Current: 200 uA

Collector- Emitter Voltage VCEO Max: 100 V