onsemi BDV64BG 达林顿晶体管 10A 100V 双极功率 PNP

Width: 4.9 mm

Height: 12.2 mm

Length: 15.2 mm

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 1000

Maximum Collector Cut-off Current: 400 uA

Collector- Emitter Voltage VCEO Max: 100 V