onsemi ECH8657-TL-H MOSFET开关器件

Technology: Si

Unit Weight: 19.450 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Qg - Gate Charge: 4.6 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.3 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 59 mOhms

Vds - Drain-Source Breakdown Voltage: 35 V

Vgs th - Gate-Source Threshold Voltage: 2.6 V