onsemi FDV303N_NB9U008 MOSFET

Vgs(th): 1.5 V

Vgs (Max): 8V

Gate Charge (Qg): 2.3nC

Power consumption: 350mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 25V

Continuous drain current: 680mA

Input Capacitance (Ciss): 50pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 450mOhm

Drive Voltage (Max Rds On, Min Rds On): 2.7|4.5V

Datasheet