onsemi FDWS9509L-F085 MOSFETs PMOS PWR56 40V 8 MOHM

Fall Time: 71 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 161.193 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel Power Trench MOSFET

Qg - Gate Charge: 48 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 107 W

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 198 ns

Id - Continuous Drain Current: 65 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 8 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1 V