onsemi FFSP1065B 肖特基碳化硅二极管 SIC DIODE 650V 10A

Technology: SiC

Unit Weight: 3.698 g

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 10 A

Ir - Reverse Current: 40 uA

Vf - Forward Voltage: 1.38 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 75 W

Ifsm - Forward Surge Current: 45 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 650 V