onsemi FGAF20S65AQ IGBT晶体管 650V 20A FS4 SA IGBT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 75 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.4 V

Continuous Collector Current at 25 C: 20 A