onsemi FODM217DV 晶体管输出光耦合器 4SO TR

Fall Time: 3 us

Rise Time: 3 us

Output Type: NPN Phototransistor

Unit Weight: 80 mg

Configuration: 1 Channel

Mounting Style: SMD/SMT

Isolation Voltage: 3750 Vrms

Number of Channels: 1 Channel

If - Forward Current: 50 mA

Vf - Forward Voltage: 1.4 V

Vr - Reverse Voltage: 6 V

Current Transfer Ratio: 300 %

Pd - Power Dissipation: 150 mW

Maximum Collector Current: 50 mA

Current Transfer Ratio - Max: 600 %

Current Transfer Ratio - Min: 300 %

Maximum Operating Temperature: + 110 C

Minimum Operating Temperature: - 55 C

Maximum Collector Emitter Voltage: 80 V

Maximum Collector Emitter Saturation Voltage: 400 mV