onsemi FPF2G120BF07ASP 晶体管 IGBT 模块 N-CH 650V 40A 17针 外壳 F2

IGBT Technology: IGBT [Field St

IGBT Termination: Solder

Power Dissipation: 156

IGBT Configuration: Triple

Transistor Mounting: Clamp Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 40

Collector Emitter Voltage Max: 650

Collector Emitter Saturation Voltage: 1.55

Datasheet