onsemi FQD19N10TM_F080 MOSFET

Vgs(th): 4 V

Vgs (Max): 25V

Gate Charge (Qg): 25nC

Power consumption: 2.5|50W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 100V

Continuous drain current: 15.6A

Input Capacitance (Ciss): 780pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 100mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V