onsemi MCH6001-TL-E 射频双极晶体管 BIP N+N 150MA 8V FT=16G

Technology: Si

Unit Weight: 7.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 16 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 600 mW

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 60 at 50 mA, 5 V

Collector- Emitter Voltage VCEO Max: 8 V