onsemi MJ21196G 双极型晶体管 BJTs 16A 250V 250W NPN

Width: 26.67 mm

Height: 8.51 mm

Length: 39.37 mm

Technology: Si

Unit Weight: 12.040 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 250 W

Gain Bandwidth Product fT: 4 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 400 V

Continuous Collector Current: 16 A

Maximum DC Collector Current: 16 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 25

Collector- Emitter Voltage VCEO Max: 250 V

Collector-Emitter Saturation Voltage: 1.4 V