onsemi MJD112G 达林顿晶体管 2A 100V 双极功率NPN

Width: 6.22 mm

Height: 2.38 mm

Length: 6.73 mm

Unit Weight: 590 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 20 W

DC Current Gain hFE Max: 12000

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 1000

Maximum Collector Cut-off Current: 20 uA

Collector- Emitter Voltage VCEO Max: 100 V