onsemi MJD128T4G 达灵顿晶体管 BIP PNP 8A 120V TR

Width: 6.22 mm

Height: 2.38 mm

Length: 6.73 mm

Unit Weight: 351 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100, 1000

Maximum Collector Cut-off Current: 10 uA

Collector- Emitter Voltage VCEO Max: 120 V