onsemi MJD210G 双极型晶体管 5A 25V 12.5W PNP

Width: 6.22 mm

Height: 2.38 mm

Length: 6.73 mm

Technology: Si

Unit Weight: 454 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.4 W

Gain Bandwidth Product fT: 65 MHz

Emitter- Base Voltage VEBO: 8 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 1.8 V