onsemi MMBF4393LT3G JFET SS JFET N沟道 30V TR

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 225 mW

Gate-Source Cutoff Voltage: - 3 V

Drain-Source Current at Vgs=0: 5 mA to 30 mA

Vgs - Gate-Source Breakdown Voltage: 30 V

Vds - Drain-Source Breakdown Voltage: 30 V