onsemi MMBT5401LT1G 双极晶体管 BJTs SS HV XSTR PNP 150V

Width: 1.3 mm

Height: 0.94 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 225 mW

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: - 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 500 mV