onsemi MMBT6427LT1G 达林顿晶体管 500mA 40V NPN

Width: 1.3 mm

Height: 0.94 mm

Length: 2.9 mm

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 225 mW

DC Current Gain hFE Max: 100000

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 10000

Maximum Collector Cut-off Current: 50 nA

Collector- Emitter Voltage VCEO Max: 40 V