onsemi MMJT350T1G 双极型晶体管 BJTs 0.5A 30V 2.75W PNP

Width: 3.5 mm

Height: 1.57 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 112 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.75 W

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 300 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 300 V